TOSHIBA MG100Q2YS50 IGBT Power Module
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Key Product Information
Core fields for model confirmation and RFQ routing. Detailed product narrative remains below.
- Brand
- TOSHIBA
- Primary Part Number
- MG100Q2YS50
- Product Type
- IGBT Power Module
- Series / Family
- Power Module MG-Q2YS Series
- Manufacturer
- TOSHIBA
- Country of Origin
- JP
- Catalog Category
- Motor Drives
MG100Q2YS50 — Stop the Clock on Your Downtime. Ship Today from Xiamen.
Your VFD tripped at 2 AM. The drive display shows an IGBT fault. The production manager is already calling. Every hour this line stays down costs real money — and you know exactly which component failed. The TOSHIBA MG100Q2YS50 is a 100A / 500V IGBT power module from the MG-Q2YS Series, and it is the single point of failure standing between you and full production recovery. We stock it. We ship it. We get it to your facility fast.
At siemensplc.com, we operate as a specialist supplier of industrial automation components for engineers who cannot afford to wait. Our Xiamen warehouse holds verified stock of the MG100Q2YS50, ready for same-day dispatch via DHL Express or FedEx International Priority. Whether you are in Southeast Asia, the Middle East, Europe, or the Americas, we have routed emergency shipments to plant floors in over 40 countries. This is not a catalog listing — this is a live inventory position backed by a team that understands what a production stoppage actually costs.
URGENT REQUIREMENT? Contact: [email protected] | WhatsApp: +86 18359268345
Quick Technical Datasheet
| Parameter | Value | Status |
|---|---|---|
| Part Number | MG100Q2YS50 | ✅ Ready to Ship |
| Manufacturer | TOSHIBA | — |
| Series | MG-Q2YS | — |
| Module Type | IGBT Power Module (6-in-1 Bridge) | — |
| Collector Current (IC) | 100 A | — |
| Collector-Emitter Voltage (VCES) | 500 V | — |
| Gate-Emitter Voltage (VGES) | ±20 V | — |
| VCE(sat) Typical | ≤ 2.5 V @ IC=100A, VGE=15V | — |
| Operating Junction Temp (Tj) | -40°C to +150°C | — |
| Thermal Resistance (Rth j-c) | ≤ 0.35°C/W | — |
| Package | Standard IGBT Module (Screw Terminal) | — |
| Integrated Freewheeling Diodes | Yes | — |
| Application | VFD, Servo Amplifier, UPS, Welding Inverter | — |
| Origin | Japan | — |
| Shipping Origin | Xiamen, China | ✅ Same-Day Dispatch Available |
Troubleshooting & Replacement Tips
Confirming IGBT Failure Before You Order
Before pulling the module, verify the fault is actually the IGBT and not a gate driver or DC bus issue. With the drive powered down and DC bus fully discharged (wait minimum 10 minutes, verify with a meter), use a diode-mode multimeter check: measure collector-to-emitter across each IGBT position. A shorted IGBT reads near 0V in both directions. An open IGBT reads OL in both directions. A healthy IGBT reads a forward diode drop (~0.4–0.7V) in one direction only. If you find a shorted position, the MG100Q2YS50 is your replacement.
Common Fault Codes That Point to This Module
- OC (Overcurrent) fault at startup or under load: Often caused by a partially degraded IGBT with elevated VCE(sat), leading to thermal runaway. The drive trips before the module fully fails.
- GF (Ground Fault) or Earth Fault: A cracked IGBT die can create a partial short to the baseplate, triggering ground fault detection. Check insulation resistance between terminals and baseplate.
- OH (Overheat) fault with no ambient temperature change: Degraded thermal interface between module and heatsink, or internal die delamination increasing Rth. Replace the module and renew thermal compound.
- IPM Fault / Hardware Fault at power-on: Gate driver detecting abnormal IGBT response during self-test. Can indicate gate oxide degradation even before full failure.
Step-by-Step Replacement Procedure
- Isolate the drive from mains supply. Lock out / tag out per site safety procedure.
- Discharge DC bus capacitors fully — minimum 10 minutes, confirm <10V DC with a calibrated meter.
- Photograph all gate driver wiring and bus bar connections before disassembly. Label every connector.
- Remove bus bar connections (DC+ and DC-) and AC output terminals. Note torque values — typically 4–6 Nm for M6 screws on this module size.
- Disconnect gate driver board ribbon cable or individual gate/emitter signal wires. Handle with ESD precautions.
- Remove module mounting screws (typically M5 or M6). Extract the failed MG100Q2YS50 from the heatsink.
- Clean heatsink surface thoroughly — remove all old thermal compound residue with isopropyl alcohol.
- Apply fresh thermal interface material (silicone-based, 1.0–1.5 W/m·K minimum) evenly across the new module baseplate. Do not over-apply — excess compound increases thermal resistance.
- Mount the new MG100Q2YS50. Torque mounting screws in a cross pattern to manufacturer specification. Uneven torque causes baseplate warping and hot spots.
- Reconnect bus bars and output terminals. Reconnect gate driver wiring exactly as photographed.
- Before powering up, perform a static gate drive check: apply 15V gate signal to each IGBT position individually and verify switching response with an oscilloscope if available.
- Power up with a reduced load or no-load condition first. Monitor drive current and temperature for the first 30 minutes of operation.
Critical Configuration Notes
- Gate drive voltage: The MG100Q2YS50 requires +15V / -8V to -10V bipolar gate drive for reliable switching. Single-supply +15V gate drive without negative bias risks shoot-through under fast transients.
- Gate resistance (Rg): Do not change gate resistor values from the original drive design. Reducing Rg speeds switching but increases dV/dt stress on the module and connected motor insulation.
- Thermal compound specification: Use only non-conductive thermal compound. Conductive compounds on IGBT modules create short-circuit risk if they migrate to terminal areas.
- Firmware / parameter reset: After module replacement, some drives (particularly Toshiba VF-series) require a fault history clear and may need IGBT thermal model parameters reset to factory defaults. Consult the drive service manual.
Reliability in Harsh Conditions
The MG-Q2YS Series was engineered for industrial environments where component failure is not an option. The MG100Q2YS50 is validated against the conditions that destroy lesser modules.
Thermal Cycling Endurance: The module’s direct copper bonding (DCB) substrate minimizes thermal expansion mismatch between the IGBT die and the ceramic insulator. This translates to extended power cycling life — critical in applications with frequent start/stop cycles such as crane drives and press machines. Toshiba’s internal qualification targets thousands of power cycles at rated current without bond wire lift-off.
Vibration Resistance: Industrial environments — particularly those with heavy machinery, compressors, or stamping presses — generate continuous mechanical vibration. The MG100Q2YS50’s screw-terminal package and rigid baseplate construction resist the micro-fretting and connector fatigue that cause intermittent failures in vibration-prone installations. Mounting the module with correct torque and using thread-locking compound on mounting screws further extends service life.
Humidity and Contamination: In coastal facilities, food processing plants, and chemical environments, humidity and airborne contaminants accelerate PCB and module degradation. The MG100Q2YS50’s ceramic-insulated baseplate provides inherent resistance to moisture ingress at the power interface. For installations in high-humidity environments, ensure the drive enclosure maintains positive pressure or filtered airflow, and inspect the module’s terminal areas annually for corrosion.
High-Altitude Operation: At altitudes above 1,000m, reduced air density lowers the dielectric strength of air gaps and reduces convective cooling efficiency. The MG100Q2YS50’s 500V VCES rating provides adequate derating margin for most high-altitude industrial sites when operated within the drive manufacturer’s altitude derating guidelines.
Global Express Logistics
Our logistics operation is built around one objective: getting your replacement module to your facility before the next production shift starts.
Dispatch from Xiamen: Our warehouse is located in Xiamen, Fujian Province — a major international logistics hub with direct access to DHL, FedEx, and UPS express networks. Orders confirmed before 15:00 CST are processed for same-day dispatch. Export documentation — commercial invoice, packing list, and HS code declaration — is prepared in parallel with packing to eliminate customs clearance delays.
DHL Express Worldwide: Typical transit times from Xiamen: Southeast Asia 1–2 business days, Middle East 2–3 business days, Europe 3–4 business days, North America 3–5 business days. DHL’s industrial parts handling protocols ensure IGBT modules are transported upright and protected from electrostatic discharge throughout the transit chain.
FedEx International Priority: For destinations where FedEx maintains stronger network coverage, we route shipments via FedEx IP with door-to-door tracking. FedEx’s customs brokerage service is available for destinations requiring formal import clearance, reducing your administrative burden during an emergency procurement.
Packaging Standard: Every MG100Q2YS50 is packed in an ESD-protective anti-static bag, surrounded by high-density foam inserts inside a double-wall corrugated carton. The package is labeled with fragile and ESD-sensitive markings. For air freight, we comply with IATA packaging requirements for electronic components.
Tracking and Communication: You receive a tracking number within 2 hours of dispatch. Our logistics team monitors shipments proactively and contacts you immediately if any customs or transit exception occurs. For critical shipments, we provide direct WhatsApp updates throughout the delivery journey.
Contact Information
📧 Email: [email protected]
💬 WhatsApp: +86 18359268345
🌐 Web: siemensplc.com
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Confirmation Process
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